1997 Dec 01

3

Philips Semiconductors

Product specification

N-channel field-effect transistors

J210; J211; J212

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

THERMAL CHARACTERISTICS

Note

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−±25

V

gate-source voltage

open drain

−−25

V

drain-gate voltage

open source

−−25

V

forward gate current (DC)

−

10

mA

total power dissipation

−

400

mW

storage temperature

−65

150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to ambient; note 1

250

K/W