DMN100 datasheet(2/3 Pages) DIODES

2 / 3 page

DS30049 Rev. 6 - 2

2 of 3

DMN100

www.diodes.com

Electrical Characteristics

@ TA = 25

°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 1)

Drain-Source Breakdown Voltage

BVDSS

¾¾

VGS = 0V, ID = 250

Zero Gate Voltage Drain Current

@ Tj = 25

°C

@Tj = 125

°C

IDSS

¾¾

1.0

µA

VDS = 24V, VGS = 0V

Gate-Body Leakage

IGSS

¾¾

± 100

VGS =

± 12V, VDS = 0V

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

VGS(th)

1.0

3.0

VDS = 10V, ID =1.0mA

Static Drain-Source On-Resistance

RDS (ON)

¾¾

0.170

0.240

VGS = 4.5V, ID = 0.5A

VGS = 10V, ID = 1.0A

Forward Transconductance

gFS

1.3

2.4

VDS = 10V, ID =0.5A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

150

VDS = 10V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

5.5

VDS = 24V, ID = 1.0A,

VGS = 10V

Gate-to-Source Charge

Qgs

0.8

Gate-to-Drain Charge

Qgd

1.3

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD = 10V, ID = 0.5A,

VGS = 5.0V, RGEN = 50

Turn-Off Delay Time

tD(OFF)

Turn-On Rise Time

Turn-Off Fall Time

SOURCE- DRAIN RATINGS (BODY DIODE)

Continuous Source Current

¾¾

0.54

Pulse Source Current

ISM

¾¾

4.0

Forward Voltage

VSD

¾¾

1.2

IF = 1.0A, VGS = 0V

Reverse Recovery Time

trr

IF = 1.0A, di/dt = 50A/

Notes:

1. Pulse width

£ 300ms, duty cycle £ 2%.

0.5

1.0

, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

3.0V

2.5V

1.5

2.0

2.5

3.0

3.5

4.0

= 10V

5.0V

4.5V

4.0V

3.5V

0.01

0.1

1.0

I , DRAIN CURRENT (A)

Fig. 2 On-Resistance vs Drain Current

V= 4.5V

V= 10V

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