поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

DMN100 датащи(PDF) 1 Page - Diodes Incorporated

номер детали DMN100
подробное описание детали  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN100 датащи(HTML) 1 Page - Diodes Incorporated

  DMN100 Datasheet HTML 1Page - Diodes Incorporated DMN100 Datasheet HTML 2Page - Diodes Incorporated DMN100 Datasheet HTML 3Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 1 / 3 page
background image
Lead-free Green
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
DS30049 Rev. 6 - 2
1 of 3
DMN100
www.diodes.com
ã Diodes Incorporated
DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
Extremely Low On-Resistance:
170m
W @VGS = 4.5V
·
High Drain Current: 1.1A
·
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
·
Lead Free By Design/RoHS Compliant (Note 2)
·
Qualified to AEC-Q101 Standards for High Reliability
·
ESD Protected Gate
·
"Green" Device (Note 3)
Maximum Ratings
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
DMN100
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Drain Current
Continuous
Pulsed
ID
1.1
4.0
A
Total Power Dissipation
Pd
500
mW
Thermal Resistance, Junction to Ambient
RqJA
250
K/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Notes:
1. Pulse width
£ 300ms, duty cycle £ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
·
Case: SC-59
·
Case Material - Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
·
Terminal Connections: See Diagram
·
Marking: See Last Page
·
Ordering & Date Code Information: See Last Page
·
Weight: 0.008 grams (approximate)
Mechanical Data
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
SC-59
Dim
Min
Max
A
0.30
0.50
B
1.40
1.80
C
2.50
3.00
D
0.85
1.05
E
0.30
0.70
G
1.70
2.10
H
2.70
3.10
J
¾
0.10
K
1.00
1.40
L
0.55
0.70
M
0.10
0.35
All Dimensions in mm
ESD protected
SPICE MODELS: DMN100


Аналогичный номер детали - DMN100

производительномер деталидатащиподробное описание детали
logo
Diodes Incorporated
DMN100 DIODES-DMN100 Datasheet
63Kb / 3P
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30049 Rev. 5 - 2
DMN100 DIODES-DMN100 Datasheet
154Kb / 4P
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30049 Rev. 7 - 2
logo
ZP Semiconductor
DMN100 ZPSEMI-DMN100 Datasheet
159Kb / 2P
N-CHANNEL ENHANCEMENT MODE MOSFET
logo
Diodes Incorporated
DMN100-7 DIODES-DMN100-7 Datasheet
63Kb / 3P
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30049 Rev. 5 - 2
DMN100-7-F DIODES-DMN100-7-F Datasheet
154Kb / 4P
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30049 Rev. 7 - 2
More results

Аналогичное описание - DMN100

производительномер деталидатащиподробное описание детали
logo
NXP Semiconductors
PHD83N03LT PHILIPS-PHD83N03LT Datasheet
282Kb / 13P
N-channel enhancement mode field-effect transistor
Rev. 01-16 July 2001
PHP112N06T PHILIPS-PHP112N06T Datasheet
262Kb / 14P
N-channel enhancement mode field-effect transistor
Rev. 01-07 March 2001
PHP47NQ10T PHILIPS-PHP47NQ10T Datasheet
267Kb / 14P
N-channel enhancement mode field-effect transistor
Rev. 01-16 May 2001
PHP78NQ03LT PHILIPS-PHP78NQ03LT Datasheet
292Kb / 14P
N-channel enhancement mode field-effect transistor
Rev. 01-14 November 2001
SI4410DY PHILIPS-SI4410DY Datasheet
266Kb / 13P
N-channel enhancement mode field-effect transistor
Rev. 02-05 July 2001
SI4416DY PHILIPS-SI4416DY Datasheet
253Kb / 13P
N-channel enhancement mode field-effect transistor
Rev. 01-05 June 2001
SI4420DY PHILIPS-SI4420DY Datasheet
254Kb / 12P
N-channel enhancement mode field-effect transistor
Rev. 01-28 May 2001
SI9956DY PHILIPS-SI9956DY Datasheet
253Kb / 13P
N-channel enhancement mode field-effect transistor
Rev. 01-16 July 2001
logo
Fairchild Semiconductor
FDC633N FAIRCHILD-FDC633N Datasheet
278Kb / 4P
N-Channel Enhancement Mode Field Effect Transistor
FDT459N FAIRCHILD-FDT459N Datasheet
89Kb / 4P
N-Channel Enhancement Mode Field Effect Transistor
More results


Html Pages

1 2 3


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com