THGAMRG7T13BAIL

2

February 14th, 2019

© 2019 Toshiba Memory Corporation

Part Number

Available e-MMC Module Product

– Part Number

Part Number

Density

Package Size

NAND Flash Type

Weight

THGAMRG7T13BAIL

16GB

11.5mm x 13mm x 0.8mm(max)

1 x 128Gbit BiCS3

TBD typ.

Temperature

Characteristics

Min

Max

Unit

Operating temperature

-25

85

°C

Storage temperature

-40

85

°C

Note: Avoid locations where e-MMC devices may be exposed to water (wet, rain, dew condensation, etc).

Performance

X8 mode/ Sequential access(4MByte access size)

Part Number

Density

NAND Flash Type

Interleave

Operation

Frequency

/Mode

VCCQ

Typ. Performance

[MB/s]

Read

Write

THGAMRG7T13BAIL

16GB

1 x 128Gbit BiCS3

Non

Interleave

52MHz/SDR

1.8V

45

TBD

52MHz/DDR

1.8V

85

TBD

HS200

1.8V

175

TBD

HS400

1.8V

310

110

Power Supply

VCC = 2.7V to 3.6V

VCCQ = 1.7V to 1.95V

Operating Current (RMS)

The measurement for max RMS current is done as average RMS current consumption over a period of 100ms.

Part Number

Density

NAND Flash Type

Interleave

Operation

Frequency

/Mode

VCCQ

Max Operating

Current [mA]

ICCQ

ICC

THGAMRG7T13BAIL

16GB

1 x 128Gbit BiCS3

Non

Interleave

52MHz/SDR

1.8V

TBD

TBD

52MHz/DDR

1.8V

TBD

TBD

HS200

1.8V

TBD

TBD

HS400

1.8V

TBD

TBD