REV.

–2–

OP777/OP727/OP747–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage OP777

VOS

+25 C < T A < +85 C

20

100

μV

–40

°C < T A < +85 °C

50

200

μV

Offset Voltage OP727/OP747

+25 C < T A < +85 C

30

160

μV

–40

°C < T A < +85 °C

60

300

μV

Input Bias Current

IB

–40

°C < T A < +85 °C

5.5

11

nA

Input Offset Current

IOS

–40

°C < T

A < +85

°C

0.1

2

nA

Input Voltage Range

0

4

V

Common-Mode Rejection Ratio

CMRR

VCM = 0 V to 4 V

104

110

dB

Large Signal Voltage Gain

AVO

RL = 10 k

Ω , V

O = 0.5 V to 4.5 V

300

500

V/mV

Offset Voltage Drift OP777

ΔVOS/ΔT

–40

°C < TA < +85 °C

0.3

1.3

μV/°C

Offset Voltage Drift OP727/OP747

ΔVOS/ΔT

–40

°C < TA < +85 °C

0.4

1.5

μV/°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

IL = 1 mA, –40

°C to +85 °C

4.88

4.91

V

Output Voltage Low

VOL

IL = 1 mA, –40

°C to +85 °C

126

140

mV

Output Circuit

IOUT

VDROPOUT < 1 V

±10

mA

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 3 V to 30 V

120

130

dB

Supply Current/Amplifier OP777

ISY

VO = 0 V

220

270

μA

–40

°C < TA < +85 °C

270

320

μA

Supply Current/Amplifier OP727/OP747

VO = 0 V

235

290

μA

–40

°C < T

A < +85

°C

290

350

μA

DYNAMIC PERFORMANCE

Slew Rate

SR

RL = 2 k

Ω

0.2

V/

μs

Gain Bandwidth Product

GBP

0.7

MHz

NOISE PERFORMANCE

Voltage Noise

enp-p

0.1 Hz to 10 Hz

0.4

μV p-p

Voltage Noise Density

en

f = 1 kHz

15

nV/

√Hz

Current Noise Density

in

f = 1 kHz

0.13

pA/

√Hz

NOTES

Typical specifications: >50% of units perform equal to or better than the “typical” value.

Specifications subject to change without notice.

(@ VS = 5.0 V, VCM = 2.5 V, TA = 25 C unless otherwise noted.)

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