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BZD23 датащи(PDF) 2 Page - NXP Semiconductors |
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BZD23 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 9 page ![]() 1996 Jun 10 2 Philips Semiconductors Product specification Voltage regulator diodes BZD23 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 3.6 to 270 V for 46 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass package through Implotec ™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. Fig.1 Simplified outline (SOD81) and symbol. handbook, 4 columns a k MAM248 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ptot total power dissipation Ttp =25 °C; lead length 10 mm; see Figs 2 and 3 BZD23-C3V6 to -C6V8 − 2.0 W BZD23-C7V5 to -C510 − 2.5 W Ptot total power dissipation Tamb =55 °C; see Figs 2 and 3; PCB mounted (see Fig.7) BZD23-C3V6 to -C6V8 − 1.0 W BZD23-C7V5 to -C510 − 1.0 W PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square pulse; Tj =25 °C prior to surge; see Figs 4 and 5 BZD23-C3V6 to -C6V8 − 300 W BZD23-C7V5 to -C510 − 300 W PRSM non-repetitive peak reverse power dissipation 10/1000 µs exponential pulse (see Fig.8); Tj =25 °C prior to surge BZD23-C7V5 to -C510 − 150 W Tstg storage temperature BZD23-C3V6 to -C6V8 −65 +200 °C BZD23-C7V5 to -C510 −65 +175 °C Tj junction temperature BZD23-C3V6 to -C6V8 −65 +200 °C BZD23-C7V5 to -C510 −65 +175 °C |
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