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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LD7577 датащи(PDF) 14 Page - Leadtrend Technology |
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LD7577 датащи(HTML) 14 Page - Leadtrend Technology |
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14 / 18 page  LD7577 14 Leadtrend Technology Corporation www.leadtrend.com.tw LD7577-DS-01 January 2009 Fig. 22 dt dV Cgd i bulk ⋅ = Fig. 23 Protection Resistor on the Hi-V Path In some other Hi-V processes and designs, there is probably some parasitic SCR caused around HV pin, VCC and GND. As shown in figure 24, a small negative spike in the HV pin may trigger this parasitic SCR and cause the latchup between VCC and GND. Such latchup will damage the chip easily because of the equivalent short-circuit induced. The LD7577 has eliminated the parasitic SCR efficiently. Figure 25 shows the equivalent circuit of the LD7577’s Hi-V structure. It tells the LD7577 is capable to sustain negative voltage and superior than similar products. Even though, a 40K Ω resistor is still recommended to be placed on the Hi-V path Fig. 24 Fig. 25 |
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