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SY100ELT23 датащи(PDF) 2 Page - Micrel Semiconductor |
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SY100ELT23 датащи(HTML) 2 Page - Micrel Semiconductor |
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2 / 4 page ![]() 2 Precision Edge™ SY10ELT23 SY100ELT23 Micrel TA = -40 °CTA = 0°CTA = +25°CTA = +85°C Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit Condition tPLH Propagation Delay 2.5 3.5 2.5 3.5 2.5 3.5 2.5 3.5 ns CL = 50pF tPHL D to Output Q tskpp Part-to-Part Skew(2,5) — 0.5 — 0.5 — 0.5 — 0.5 ns CL = 50pF tskew++ Within-Device Skew(3,5) — 0.3 — 0.3 — 0.3 — 0.3 ns CL = 50pF tskew– – Within-Device Skew(4,5) — 0.3 — 0.3 — 0.3 — 0.3 ns CL = 50pF tr Output Rise/Fall Time — 1.5 — 1.5 — 1.5 — 1.5 ns CL = 50pF tf 1.0V to 2.0V fMAX Maximum Input Frequency(5) 160 — 160 — 160 — 160 — MHz CL = 50pF Symbol Paramter Value Unit VCC Power Supply Voltage –0.5 to +7.0 V VI PECL Input Voltage 0V to VCC+0.5 V VO Voltage Applied to –0.5 to +5.5 V Output at HIGH State IO Current Applied to Twice the mA Output at LOW State Rated IOL Tstore Storage Temperature –65 to +150 °C TA Operating Temperature –40 to +85 °C NOTE: 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. This is a stress rating only and functional operation is not implied at conditions other than those detailed in the operational sections of this data sheet. Exposure to ABSOLUTE MAXIMUM RATlNG conditions for extended periods may affect device reliability. TA = -40 °CTA = 0°CTA = +25°CTA = +85°C Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit Condition ICC Power Supply Current — 30 — 30 — 30 — 30 mA — ABSOLUTE MAXIMUM RATINGS(1) TRUTH TABLE DD Q LH L HL H Open Open L DC ELECTRICAL CHARACTERISTICS(1) VCC = VCC (Min.) to VCC (Max.) AC ELECTRICAL CHARACTERISTICS(1) VCC = VCC (Min.) to VCC (Max.) NOTE: 1. Parametric values specified at: 5 volt Power Supply Range 100ELT23 Series: +4.5V to +5.5V. 10ELT23 Series +4.75V to +5.5V. NOTES: 1. Parametric values specified at: 5 volt Power Supply Range 100ELT23 Series: +4.5V to +5.5V. 10ELT23 Series +4.75V to +5.5V. 2. Device-to-Device Skew considering HIGH-to-HIGH transitions at common VCC level. 3. Within-Device Skew considering HIGH-to-HIGH transitions at common VCC level. 4. Within-Device Skew considering LOW-to-LOW transitions at common VCC level. 5. These parameters are guaranteed but not tested. |
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