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NTP65N02RG датащи(PDF) 4 Page - ON Semiconductor

номер детали NTP65N02RG
подробное описание детали  Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK
PDF  8 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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NTP65N02RG датащи(HTML) 4 Page - ON Semiconductor

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NTB65N02R, NTP65N02R
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4
0
400
800
1200
1600
2000
10
5
0
5
10
15
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(V)
Figure 7. Capacitance Variation
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
Ciss
VDS = 0 V
Crss
VGS
VDS
0
1
2
3
4
5
04
6
10
12
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
QGS
QGD
VGS
ID = 30 A
TJ = 25°C
1
10
100
1000
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
VDS = 10 V
ID = 30 A
VGS = 10 V
1
10
1000
0.1
1
10
100
RDS(ON) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
ms
100
ms
1 ms
10 ms
dc
VGS = 20 V
SINGLE PULSE
TC = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1
Figure 10. Diode Forward Voltage versus
Current
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
TJ = 25°C
TJ = 150°C
tr
td(off)
tf
td(on)
100
28
0
2
4
6
8
10
VDS
QT



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