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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NTP65N02RG датащи(PDF) 2 Page - ON Semiconductor |
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NTP65N02RG датащи(HTML) 2 Page - ON Semiconductor |
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2 / 8 page  NTB65N02R, NTP65N02R http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 24 − 27.5 25.5 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS − − − − 1.5 10 mAdc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 − 1.5 4.1 2.0 − Vdc mV/ °C Static Drain−to−Source On−Resistance (Note 3) (VGS = 4.5 Vdc, ID = 15 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 30 Adc) RDS(on) − − − 11.2 8.4 8.2 12.5 10.5 − m W Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc) gFS − 27 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss − 948 1330 pF Output Capacitance (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) Coss − 456 640 Transfer Capacitance ( DS dc, GS ,) Crss − 160 225 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) − 7.0 − ns Rise Time (VGS = 10 Vdc, VDD = 10 Vdc, tr − 53 − Turn−Off Delay Time (VGS = 10 Vdc, VDD = 10 Vdc, ID = 30 Adc, RG = 3 W) td(off) − 14 − Fall Time tf − 10 − Gate Charge QT − 9.5 − nC (VGS = 4.5 Vdc, ID = 30 Adc, VDS = 10 Vdc) (Note 3) Q1 − 3.0 − VDS = 10 Vdc) (Note 3) Q2 − 4.4 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 3) VSD − 0.88 1.2 Vdc Forward On−Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 3) (IS = 30 Adc, VGS = 0 Vdc) (I 15 A V 0V T 125 °C) VSD − − 0.88 1.10 080 1.2 − Vdc ( S dc, GS dc) (IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C) − 0.80 − Reverse Recovery Time trr − 29.1 − ns (IS =30 Ad VGS =0Vd ta − 13.6 − (IS = 30 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) tb − 15.5 − Reverse Recovery Stored Charge S m )( ) QRR − 0.02 − mC 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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