NIF9N05CLT1 datasheet(3/6 Pages) ONSEMI

3 / 6 page

NIF9N05CL

http://onsemi.com

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Unit

Max

Typ

Min

Symbol

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

VGS = 4.5 V, VDD = 40 V,

ID = 2.6 A, RD = 15.4 W

td(on)

275

465

Rise Time

1418

2400

Turn−Off Delay Time

td(off)

780

1320

Fall Time

1120

1900

Turn−On Delay Time

VGS = 4.5 V, VDD = 40 V,

ID = 1.0 A, RD = 40 W

td(on)

242

Rise Time

1165

Turn−Off Delay Time

td(off)

906

Fall Time

1273

Turn−On Delay Time

VGS = 10 V, VDD = 15 V,

ID = 2.6 A, RD = 5.8 W

td(on)

107

Rise Time

290

Turn−Off Delay Time

td(off)

1540

Fall Time

1000

Gate Charge

VGS = 4.5 V, VDS = 40 V,

ID = 2.6 A (Note 3)

4.5

7.0

0.9

2.6

Gate Charge

VGS = 4.5 V, VDS = 15 V,

ID = 1.5 A (Note 3)

3.9

1.0

1.7

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

IS = 2.6 A, VGS = 0 V (Note 3)

IS = 2.6 A, VGS = 0 V, TJ = 125°C

VSD

0.81

0.66

1.5

Reverse Recovery Time

IS = 1.5 A, VGS = 0 V,

dIs/dt = 100 A/ms (Note 3)

trr

730

200

530

Reverse Recovery Stored Charge

QRR

6.3

ESD CHARACTERISTICS

Electro−Static Discharge Capability

Human Body Model (HBM)

ESD

5000

Machine Model (MM)

500

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

NIF9N05CLT1 датащи(PDF) 3 Page - ON Semiconductor

NIF9N05CLT1 датащи(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL