NIF9N05CLT1 datasheet(1/6 Pages) ONSEMI

номер детали	NIF9N05CLT1

подробное описание детали	Protected Power MOSFET

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производитель	ONSEMI [ON Semiconductor]

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May, 2006 − Rev. 5

1

Publication Order Number:

NIF9N05CL/D

NIF9N05CL

Protected Power MOSFET

2.6 A, 52 V, N−Channel, Logic Level,

Clamped MOSFET w/ ESD Protection

in a SOT−223 Package

Benefits

• High Energy Capability for Inductive Loads

• Low Switching Noise Generation

Features

• Diode Clamp Between Gate and Source

• ESD Protection − HBM 5000 V

• Active Over−Voltage Gate to Drain Clamp

• Scalable to Lower or Higher RDS(on)

• Internal Series Gate Resistance

• Pb−Free Packages are Available

Applications

• Automotive and Industrial Markets:

Solenoid Drivers, Lamp Drivers, Small Motor Drivers

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

VDSS

52−59

V

Gate−to−Source Voltage − Continuous

VGS

±15

V

Drain Current

− Continuous @ TA = 25°C

− Single Pulse (tp = 10 ms) (Note 1)

ID

IDM

2.6

10

A

Total Power Dissipation @ TA = 25°C (Note 1)

PD

1.69

W

Operating and Storage Temperature Range

TJ, Tstg

−55 to 150

°C

Single Pulse Drain−to−Source

Avalanche Energy (VDD = 50 V, ID(pk) = 1.17

A, VGS = 10 V, L = 160 mH, RG = 25 W)

EAS

110

mJ

Thermal Resistance,

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

RqJA

74

169

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from Case for 10 Seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to a FR4 board using 1

″ pad size, (Cu area 1.127 in2).

2. When surface mounted to a FR4 board using minimum recommended pad

size, (Cu area 0.412 in2).

MPWR

Gate

(Pin 1)

RG

Overvoltage

Protection

ESD Protection

http://onsemi.com

SOT−223

CASE 318E

STYLE 3

DRAIN

GATE

DRAIN

SOURCE

(Top View)

MARKING DIAGRAM

A

= Assembly Location

Y

= Year

W

= Work Week

F9N05 = Specific Device Code

G

= Pb−Free Package

1

2

3

4

VDSS

(Clamped)

RDS(ON) TYP

ID MAX

52 V

107 m

W

2.6 A

Source

(Pin 3)

Drain

(Pins 2, 4)

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

(Note: Microdot may be in either location)

Аналогичный номер детали - NIF9N05CLT1

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	NIF9N05CLT1	66Kb / 6P	PROTECTED POWER MOSFET July, 2004 ??Rev. 3
ON Semiconductor	NIF9N05CLT1	195Kb / 8P	Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package November, 2011 - Rev. 6
VBsemi Electronics Co.,...	NIF9N05CLT1G	1,010Kb / 8P	N-Channel 60-V (D-S) MOSFET
ON Semiconductor	NIF9N05CLT1G	195Kb / 8P	Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package November, 2011 - Rev. 6

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Аналогичное описание - NIF9N05CLT1

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