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BYV79 датащи(PDF) 2 Page - NXP Semiconductors

номер детали BYV79
подробное описание детали  Rectifier diodes ultrafast
PDF  6 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYV79 датащи(HTML) 2 Page - NXP Semiconductors

  BYV79 Datasheet HTML 1Page - NXP Semiconductors BYV79 Datasheet HTML 2Page - NXP Semiconductors BYV79 Datasheet HTML 3Page - NXP Semiconductors BYV79 Datasheet HTML 4Page - NXP Semiconductors BYV79 Datasheet HTML 5Page - NXP Semiconductors BYV79 Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
BYV79 series
ultrafast
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
2.0
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air
-
60
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 14 A; Tj = 150˚C
-
0.83
0.90
V
I
F = 14 A
-
0.95
1.05
V
I
F = 50 A
-
1.20
1.30
V
I
R
Reverse current
V
R = VRWM; Tj = 100 ˚C
-
0.5
1.3
mA
V
R = VRWM
-
5
50
µA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge
I
F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
-
6
15
nC
t
rr
Reverse recovery time
I
F = 1 A; VR ≥ 30 V;
-
20
30
ns
-dI
F/dt = 100 A/µs
I
rrm
Peak reverse recovery current
I
F = 10 A; VR ≥ 30 V;
-
3
4
A
-dI
F/dt = 50 A/µs; Tj = 100 ˚C
V
fr
Forward recovery voltage
I
F = 10 A; dIF/dt = 10 A/µs
-
1
-
V
October 1994
2
Rev 1.100



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