Philips Semiconductors

Product specification

Rectifier diodes

BYV79 series

ultrafast

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated high efficiency

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

rectifier diodes in a plastic envelope,

featuring low forward voltage drop,

BYV79-

100

150

200

ultra-fast recovery times and soft

V

RRM

Repetitive peak reverse

100

150

200

V

recovery characteristic. They are

voltage

intended for use in switched mode

V

F

Forward voltage

0.9

0.9

0.9

V

power supplies and high frequency

I

F(AV)

Forward current

14

14

14

A

circuits

in

general

where

low

t

rr

Reverse recovery time

30

30

30

ns

conduction and switching losses are

essential.

PINNING - TO220AC

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

cathode (k)

2

anode (a)

tab

cathode (k)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-100

-150

-200

V

RRM

Repetitive peak reverse voltage

-

100

150

200

V

V

RWM

Crest working reverse voltage

-

100

150

200

V

V

R

Continuous reverse voltage

1

-

100

150

200

V

I

F(AV)

Average forward current

2

square wave;

δ = 0.5;

-

14

A

T

sinusoidal; a = 1.57;

-

12.7

A

T

I

F(RMS)

RMS forward current

-

20

A

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

28

A

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

150

A

current

t = 8.3 ms

-

160

A

sinusoidal; with reapplied

V

RWM(max)

I

I

t = 10 ms

-

112

A

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

1

tab

2

k

a

1 T

2 Neglecting switching and reverse current losses.

October 1994

1

Rev 1.100