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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AT45DB041D датащи(PDF) 39 Page - ATMEL Corporation |
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AT45DB041D датащи(HTML) 39 Page - ATMEL Corporation |
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39 / 53 page  39 3595H–DFLASH–03/07 AT45DB041D 22. Write Operations The following block diagram and waveforms illustrate the various write sequences available. 22.1 Buffer Write 22.2 Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page) FLASH MEMORY ARRAY PAGE (256/264 BYTES) BUFFER 2 (256/264 BYTES) BUFFER 1 (256/264 BYTES) I/O INTERFACE SI BUFFER 1 TO MAIN MEMORY PAGE PROGRAM BUFFER 2 TO MAIN MEMORY PAGE PROGRAM BUFFER 1 WRITE BUFFER 2 WRITE SI (INPUT) CMD Completes writing into selected buffer CS X X···X, BFA8 BFA7-0 n n+1 Last Byte BINARY PAGE SIZE 16 DON'T CARE + BFA7-BFA0 SI (INPUT) CMD PA10-7 PA6-0, X CS Starts self-timed erase/program operation XXXX XX Each transition represents 8 bits n = 1st byte read n+1 = 2nd byte read BINARY PAGE SIZE A18-A8 + 8 DON'T CARE BITS |
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