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WAS110M12BM2 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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WAS110M12BM2 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 11 page ![]() ISCFM8002 eq WAS110M12BM2 All-SiC Power MODULE www.iscsemi.com 2023-9-2 1 FEATURES · VDS =1200V,RDS(on)= 16mΩ(max) · Zero Reverse Recovery Current from Diode · Zero Turn-Off Tail Current from MOSFET · High-Frequency Operation · Ease of Paralleling · Ultra Low Loss APPLICATIONS · Induction Heating · Solar and Wind Inverters · DC/AC Converters Absolute Maximum Ratings(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS VALUE UNIT VDS max Drain-Source Voltage 1200 V VGS max Gate-Source Opetation Voltage Absolute Maximum Values -10/+25 V VGS op Gate-Source Opetation Voltage Recommended Operational Values -5/+20 V ID Continuous Drain Current VGS=20V, Tc=25℃ 200 A VGS=20V, Tc=90℃ 144 A ID(pulsed) Maximum Pulsed Drain-Source Current VGS=20V, Tvj=25℃, tpmax Limited by Tvj max 480 A TJ Max. Operating Junction Temperature -40~175 ℃ Ptot Total power dissipation Tc=90℃ 365 W |
Аналогичный номер детали - WAS110M12BM2 |
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Аналогичное описание - WAS110M12BM2 |
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