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WAS110M12BM2 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали WAS110M12BM2
подробное описание детали  All-SiC Power MODULE
PDF  11 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
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WAS110M12BM2 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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ISCFM8002
eq WAS110M12BM2
All-SiC Power MODULE
www.iscsemi.com
2023-9-2
2
MOSFET ChaRACTERISTICS (TC =25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V;
1200
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 6mA
1.8
2.6
4.0
V
RDS(on)
Drain-Source On-stage Resistance
VGS= 20V; ID= 120A
--
13
16
mΩ
VGS= 20V; ID= 120A;TJ=150°C
--
23
--
IGSS
Gate Source Leakage Current
VGS= 20V; VDS= 0V
--
--
1.5
uA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V, VGS = 0V
--
0.45
3
mA
Ciss
Input Capacitance
VGS = 0V,
VDS = 800V,
f = 0.2MHz
VAC=25mV
--
8395
--
pF
Coss
Output Capacitance
--
502
--
Crss
Reverse Transfer Capacitance
--
34
--
Qg
Total Gate Charge
VDS = 800V,
ID=120A,
VGS=-5V/ +25V
--
555
--
nC
Qgs
Gate-Source Charge
--
105
--
Qgd
Gate-Drain Charge
--
60
--
Eon
Turn-On Switching Energy
TJ=25°C,
VGS=-5/+20V, ID= 120A,
VDS=600V, Rg=2.5Ω,
L=22.5uH
--
8.6
--
mJ
Eoff
Turn-Off Switching Energy
--
4.4
--
Eon
Turn-On Switching Energy
TJ=150°C,
VGS=-5/+20V, ID= 120A,
VDS=600V, Rg=2.5Ω,
L=22.5uH
--
7.6
--
mJ
Eoff
Turn-Off Switching Energy
--
4.3
--



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