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NTLJS3113P датащи(PDF) 3 Page - ON Semiconductor |
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NTLJS3113P датащи(HTML) 3 Page - ON Semiconductor |
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3 / 6 page ![]() NTLJS3113P http://onsemi.com 3 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1 0.05 3 2 0.03 0.01 0.08 47 1.3 1.5 1.1 0.9 0.7 10000 06 2 1 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1.0 2.0 1.5 0.02 3.0 Figure 3. On−Resistance versus Drain Current −ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance versus Drain Current and Gate Voltage −ID, DRAIN CURRENT (AMPS) Figure 5. On−Resistance Variation with Temperature TJ, JUNCTION TEMPERATURE (°C) Figure 6. Drain−to−Source Leakage Current versus Voltage −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 7 −50 50 25 0 −25 75 125 100 1 212 10 4 3 1 2 VDS ≥ 10 V TJ = 25°C TJ = −55°C TJ = 125°C VGS = −1.8 V VGS = 0 V ID = −6 A VGS = −4.5 V 3 0.04 TJ = 100°C TJ = 150°C 2 0 9 1.5 TJ = 25°C 20 VGS = −1.7 V to −8 V −1.5 V 3 1000 4 4 0 4 0.03 0.02 TJ = 25°C 150 10 100000 2.5 −1.4 V −1.3 V −1.2 V TJ = 25°C VGS = −4.5 V TJ = −55°C TJ = 100°C 0.04 VGS = −4.5 V VGS = −2.5 V 6 8 14 16 18 2 0.5 2.5 5 5 6 5 6 −1.6 V −1.1 V 8 1 3 5 7 0.07 0.06 6 100 |
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