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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LT8607 датащи(PDF) 3 Page - Analog Devices |
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LT8607 датащи(HTML) 3 Page - Analog Devices |
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3 / 24 page  LT8609S 3 Rev. D For more information www.analog.com ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: The LT8609SE is guaranteed to meet performance specifications from 0°C to 125°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization, and correlation with statistical process controls. The LT8609SI is guaranteed over the full –40°C to 125°C operating junction temperature range. Note 3: This IC includes overtemperature protection that is intended to protect the device during overload conditions. Junction temperature will exceed 150°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime. Note 4: θ values determined per JEDEC 51-7, 51-12. See the Applications Information Section for information on improving the thermal resistance and for actual temperature measurements of a demo board in typical operating conditions. PARAMETER CONDITIONS MIN TYP MAX UNITS Minimum Input Voltage l 2.7 3.0 3.2 V VIN Quiescent Current VEN/UV = 0V, VSYNC = 0V VEN/UV = 2V, Not Switching, VSYNC = 0V, VIN ≤ 36V l 1 1.7 5 12 µA µA VIN Current in Regulation VIN = 6V, VOUT = 2.7V, Output Load = 100µA VIN = 6V, VOUT = 2.7V, Output Load = 1mA l l 46 480 90 700 µA µA Feedback Reference Voltage VIN = 6V, ILOAD = 100mA VIN = 6V, ILOAD = 100mA l 0.770 0.758 0.774 0.774 0.778 0.794 V V Feedback Voltage Line Regulation VIN = 4.0V to 40V l 0.02 0.06 %/V Feedback Pin Input Current VFB = 1V l ±20 nA Minimum On-Time ILOAD = 1.75A, SYNC = 0V ILOAD = 1.75A, SYNC = 1.9V l l 45 45 75 60 ns ns Minimum Off Time 90 130 ns Oscillator Frequency RT = 221k, ILOAD = 0.5A RT = 60.4k, ILOAD = 0.5A RT = 18.2k, ILOAD = 0.5A l l l 155 640 1.925 200 700 2.00 245 760 2.075 kHz kHz MHz Top Power NMOS On-Resistance ILOAD = 1A 185 mΩ Top Power NMOS Current Limit l 3.4 4.75 5.7 A Bottom Power NMOS On-Resistance 115 mΩ SW Leakage Current VIN = 42V, VSW = 40V 5 µA EN/UV Pin Threshold EN/UV Rising l 0.99 1.05 1.11 V EN/UV Pin Hysteresis 50 mV EN/UV Pin Current VEN/UV = 2V l ±20 nA PG Upper Threshold Offset from VFB VFB Rising l 5.0 8.5 13.0 % PG Lower Threshold Offset from VFB VFB Falling l 5.0 8.5 13.0 % PG Hysteresis 0.5 % PG Leakage VPG = 42V l ±200 nA PG Pull-Down Resistance VPG = 0.1V 550 1200 Ω Sync Low Input Voltage l 0.4 0.9 V Sync High Input Voltage INTVCC = 3.5V l 2.7 3.2 V TR/SS Source Current l 1 2 3 µA TR/SS Pull-Down Resistance Fault Condition, TR/SS = 0.1V 300 900 Ω Spread Spectrum Modulation Frequency VSYNC = 3.3V 0.5 3 6 kHz |
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