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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PDSP16350/B0/GC датащи(PDF) 11 Page - Zarlink Semiconductor Inc |
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PDSP16350/B0/GC датащи(HTML) 11 Page - Zarlink Semiconductor Inc |
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11 / 13 page  PDSP16350 10 Characteristic Output high voltage Output low voltage Input high voltage Input low voltage Input leakage current Input capacitance Output leakage current Output S/C current NOTES 1. Exceeding these ratings may cause permanent damage. Functional operation under these conditions is not implied. 2. Maximum dissipation or 1 second should not be ex- ceeded, only one output to be tested at any one time. 3. Exposure to absolute maximum ratings for extended peri- ods may affect device reliablity. 4. Vcc = Max, Outputs Unloaded, Clock Freq = Max. 5. CMOS levels are defined as VIH = VDD - 0.5v VIL = +0.5v 6. Current is defined as positive into the device. 7. The ø JC data assumes that heat is extracted from the top face of the package. ABSOLUTE MAXIMUM RATINGS (Note 1) Supply voltage Vcc -0.5V to 7.0V Input voltage V IN -0.5V to Vcc + 0.5V Output voltage V OUT -0.5V to Vcc + 0.5V Clamp diode current per pin I K (see note 2) 18mA Static discharge voltage (HMB) 500V Storage temperature T S -65 °C to 150°C Ambient temperature with power applied T AMB Military -55 °C to +125°C Industrial -40 °C to 85°C Junction temperature 150 °C Package power dissipation 3500mW Thermal resistances Junction to Case ø JC 5 °C/W Min. 2.4 - 3.0 - -10 -50 40 Max. - 0.4 - 0.8 +10 +50 250 Conditions I OH = 4mA I OL = -4mA GND < V IN < VCC GND < V OUT < VCC V CC = Max Units V V V V µA pF µA mA Symbol V OH V OL V IH V IL I IN C IN I OZ I SC Value Typ. 10 Characteristic Industrial Military Units Conditions Min. Typ. Max. Min. Typ. Max. D33:0 signal setup to clock rising edge 15 - 15 - ns D33:0 signal hold after clock rising edge 4 - 4 - ns CEN setup to clock rising edge 20 - 20 - ns CEN hold after clock rising edge 0 - 0 - ns JUMP, RES setup to clock rising edge 10 - 10 - ns JUMP hold after clock rising edge 6 - 6 - ns RES hold after clock rising edge 8 - 8 - ns Clock rising edge to output valid 5 30 5 30 ns 30pF Clock freq DC 20 DC 20 MHz Clock High Time 15 - 15 - ns Clock Low Time 20 - 20 - ns OES,OEC low to data valid - 20 - 20 ns 30pF OES,OEC high to data high impedance - 20 - 20 ns 30pF Pipeline delay VIN to VOUT 31 31 31 31 CLKs Vcc Current (CMOS inputs) - 430 - 450 mA See Note 4 Vcc Current (TTL inputs) - 460 - 500 mA See Note 4 Switching Characteristics ELECTRICAL CHARACTERISTICS Operating Conditions (unless otherwise stated) Commercial: T AMB = 0°C to +70°C TJ(MAX) = 95°C V CC = 5.0V±5% Ground = 0V Industrial: T AMB = -40°C to +85°C TJ(MAX) = 110°C V CC = 5.0V±10% Ground = 0V Military: T AMB = -55°C to +125°C TJ(MAX) = 150°C V CC = 5.0V±10% Ground = 0V Static Characteristics |
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