2SB1412-TN3-F-R datasheet(4/5 Pages) UTC

номер детали	2SB1412-TN3-F-R

подробное описание детали	HIGH VOLTAGE SWITCHING TRANSISTOR

PDF	5 Pages

Scroll/Zoom	100%

производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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4 / 5 page

2SB1412

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R209-021,A

TYPICAL CHARACTERISTICS(Cont.)

Collector Output Capacitance

vs.Collector-Base Voltage

100

Collector to Base Voltage:VCB (V)

200

500

10 20

Emitter Current : IE(mA)

Gain Bandwidth Product vs.Emitter

Current

50 100

500

100

1000

200

500

-0.1 -0.2

-0.5

-5

-1

-2

-20

-10

1000

Collector-emitter Saturation Voltage

vs.Collector Current (II)

-0.2

-0.05

-0.1

-0.5

-0.02

-0.01

Collector Current : Ic(A)

-1

-2

-2m -5m -0.01-0.02-0.05 -0.1

-0.5 -1 -2 -5 -10

-0.2

-5

Ta=100℃

Ic/IB=10

Collector-emitter Saturation Voltage

vs.Collector Current (III)

-0.2

-0.05

-0.1

-0.5

-0.02

-0.01

Collector Current : Ic(A)

-1

-2

-2m

-5m-0.01-0.02-0.05 -0.1

-0.5 -1 -2 -5 -10

-0.2

-5

Ta= -25℃

Ta=25℃

Ic/IB=30

Ta=100℃

Ta= -25℃

Ta=25℃

Collector-emitter Saturation Voltage

vs.Collector Current (IV)

-0.2

-0.05

-0.1

-0.5

-0.02

-0.01

Collector Current : Ic(A)

-1

-2

-2m -5m -0.01-0.02-0.05 -0.1

-0.5 -1 -2 -5 -10

-0.2

-5

Ta=100℃

Ic/IB=40

Collector-emitter Saturation Voltage

vs.Collector Current (V)

-0.2

-0.05

-0.1

-0.5

-0.02

-0.01

Collector Current : Ic(A)

-1

-2

-2m

-5m-0.01-0.02-0.05 -0.1

-0.5 -1 -2 -5 -10

-0.2

-5

Ta= -25℃

Ta=25℃

Ic/IB=50

Ta=100℃

Ta= -25℃

Ta=25℃

200

1000

VcE= -6V

Ta=25℃

f =1MHz

IE=0A

-50

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