2SB1412-TN3-F-R datasheet(2/5 Pages) UTC

2 / 5 page

2SB1412

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R209-021,A

ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)

PARAMETER

SYMBOL

LIMITS

UNIT

Collector-Base Voltage

VCBO

-30

Collector-Emitter Voltage

VCEO

-20

Emitter-Base Voltage

VEBO

-6

Collector Current(DC)

-5

Collector Current(PULSE) Single pulse, Pw=10ms

ICP

-10

Collector Power Dissipation

Collector Power Dissipation (note2)

10(TC=25°C)

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2.When mounted on a 40*40*0.7mm ceramic board.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

BVCBO

IC= -50μA

-30

Collector Emitter Breakdown Voltage

BVCEO

IC= -1mA

-20

Emitter Base Breakdown Voltage

BVEBO

IE= -50μA

-6

Collector Cut-Off Current

ICBO

VCB= -20V

-0.5

μA

Emitter Cut-Off Current

IEBO

VEB= -5V

-0.5

μA

DC Current Transfer Ratio

hFE

VCE= -2V,Ic= -0.5A

390

Collector-Emitter Saturation Voltage

VCE(SAT) IC/IB= -4A/-0.1A

-1.0

Transition Frequency

VCE= -6V, IE= 50 mA, f=30MHz

120

MHz

Output Capacitance

Cob

VCB= -20V, IE= 0 A, f=1MHz

CLASSIFICATION OF hFE

RANK

RANGE

82-180

120-270

180-390

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