2.1

Electrical characteristics (curves)

Note:

For the P-channel Power MOSFET, current and voltage polarities are reversed.

Figure 1. Safe operating area

ID

10

1

0.1

0.1

1

VDS(V)

10

(A)

Operation

in this

area

is

Limited

by

max

RDS(on)

1ms

10ms

100µs

Tj=175°C

Tc=25°C

Single pulse

GIPG021020141123FSR

Figure 2. Normalized transient thermal impedance

GIPG021020141545FSR

SINGLE PULSE

0.05

0.02

0.01

10-5

10-4

10-3

10-2

tp(s)

10-2

10-1

K

0.1

0.2

δ= 0.5

Figure 3. Typical output characteristics

ID

25

15

5

0

0

4

VDS(V)

8

(A)

12

4V

5V

VGS=7, 8, 9, 10V

10

20

6V

GIPG270520141052SA

Figure 4. Typical transfer characteristics

ID

20

10

0

3

VGS(V)

5

(A)

2

4

6

5

15

25

VDS=16V

7

8

9

GIPG270520141058SA

Figure 5. Typical gate charge characteristics

VGS

6

4

2

0

0

10

Qg(nC)

(V)

8

15

20

10

VDD=80V

ID=10A

12

5

GIPG270520141105SA

Figure 6. Typical drain-source on-resistance

RDS(on)

134

133.5

133

1

3

ID(A)

(mΩ)

2

4

134.5

VGS=10V

5

135

135.5

GIPG270520141110SA

STD10P10F6

Electrical characteristics (curves)

DS10343 - Rev 3

page 4/16