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STD10P10F6 датащи(PDF) 2 Page - STMicroelectronics

номер детали STD10P10F6
подробное описание детали  P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package
PDF  16 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STD10P10F6 датащи(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
-100
V
VGS
Gate-source voltage
±20
V
ID
Drain current (continuous) at TC = 25 °C
-10
A
ID
Drain current (continuous) at TC = 100 °C
-7.5
A
IDM (1)
Drain current (pulsed)
-40
A
PTOT
Total power dissipation at TC=25 °C
40
W
Tstg
Storage temperature range
- 55 to 175
°C
TJ
Operating junction temperature range
1. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance, junction-to-case
3.75
°C/W
RthJB (1)
Thermal resistance, junction-to-board
50
°C/W
1. When mounted on FR-4 board of 1inch², 2oz Cu t < 10 s.
STD10P10F6
Electrical ratings
DS10343 - Rev 3
page 2/16



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