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STGW60H65DFB датащи(PDF) 2 Page - STMicroelectronics

номер детали STGW60H65DFB
подробное описание детали  Trench gate field-stop 650 V, 60 A high speed HB series IGBT
PDF  21 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STGW60H65DFB датащи(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
650
V
IC
Continuous collector current at TC = 25 °C
80 (1)
A
Continuous collector current at TC = 100 °C
60
A
ICP (2)(3)
Pulsed collector current
240
A
VGE
Gate-emitter voltage
±20
V
Transient gate-emitter voltage (tP ≤ 10 μs)
±30
V
IF
Continuous forward current at TC = 25 °C
80 (1)
A
Continuous forward current at TC = 100 °C
60
A
IFP (2)(3)
Pulsed forward current
240
A
PTOT
Total power dissipation at TC = 25 °C
375
W
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 175
°C
1. Current level is limited by bond wires.
2. Pulse width is limited by maximum junction temperature.
3. Defined by design, not subject to production test.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.4
°C/W
RthJC
Thermal resistance junction-case diode
1.14
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical ratings
DS9535 - Rev 8
page 2/21



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