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STGW60H65DFB датащи(PDF) 7 Page - STMicroelectronics

номер детали STGW60H65DFB
подробное описание детали  Trench gate field-stop 650 V, 60 A high speed HB series IGBT
PDF  21 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW60H65DFB датащи(HTML) 7 Page - STMicroelectronics

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Figure 13. Switching energy vs temperature
E (µJ)
1800
1000
200
25
TJ(°C)
50
75
100
125
2600
VCC=400V, VGE=15V
Rg=10Ω, IC=60A
150
EOFF
EON
GIPD290820131623FSR
Figure 14. Switching energy vs gate resistance
E(µJ)
2100
1300
500
2
RG(Ω)
6
10
2900
VCC=400V, VGE=15V
IC=60A, TJ=175°C
14
18
EOFF
EON
GIPD280820131527FSR
Figure 15. Switching energy vs collector current
E (µJ)
2000
1000
0
0
IC(A)
20
40
60
80
3000
4000
5000
6000
7000
VCC=400V, VGE=15V
Rg=10Ω, TJ=175°C
100
EOFF
EON
GIPD280820131538FSR
Figure 16. Switching energy vs collector emitter voltage
E (µJ)
2300
1300
300
150
VCE(V)
250
350
450
3300
TJ=175°C, VGE=15V
Rg=10Ω, IC=60A
EOFF
EON
4300
GIPD280820131554FSR
Figure 17. Switching times vs collector current
t
(ns)
100
10
1
0
IC (A)
20
40
60
80
TJ=175°C, VGE=15V
Rg=10Ω, VCC=400V
100
t f
t doff
t don
t r
GIPD280820131613FSR
Figure 18. Switching times vs gate resistance
t
(ns)
100
10
Rg(Ω)
4
8
TJ =175°C, VGE =15V
IC =60A, VCC =400V
12
tf
tdoff
16
tdon
tr
20
GIPD280820131622FSR
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics (curves)
DS9535 - Rev 8
page 7/21



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