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P75NS04Z датащи(PDF) 5 Page - STMicroelectronics

номер детали P75NS04Z
подробное описание детали  N-channel Clamped - 7mohm - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET
PDF  12 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

P75NS04Z датащи(HTML) 5 Page - STMicroelectronics

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Electrical characteristics
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Table 6.
Switching on/off
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD= 20V, ID = 40A
RG= 4.7 Ω, VGS= 10V,
(see Figure 12)
16
248
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD= 20V, ID = 40A
RG= 4.7 Ω, VGS= 10V,
(see Figure 12)
53
85
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
80
320
A
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on Voltage
ISD=80A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A, di/dt = 100A/µs,
VDD=30V, Tj=150°C
(see Figure 17)
53
91
3.4
ns
nC
A



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