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P75NS04Z датащи(PDF) 3 Page - STMicroelectronics

номер детали P75NS04Z
подробное описание детали  N-channel Clamped - 7mohm - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET
PDF  12 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

P75NS04Z датащи(HTML) 3 Page - STMicroelectronics

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STP75NS04Z
Electrical ratings
3/12
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
Clamped
V
VDG
Drain-gate voltage (VGS = 0)
Clamped
V
VGS
Gate-source voltage
Clamped
V
ID
(1)
1.
Current limited by wire bonding
Drain current (continuous) at TC = 25°C
80
A
ID
Drain current (continuous) at TC = 100°C
63
A
IDG
Drain gate current (continuos)
±50
mA
IGS
Gate source current (continuos)
±50
mA
IDM
(2)
2.
Pulse with limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25°C
110
W
Derating factor
0.73
W/°C
VESD
Gate-source ESD (HBM-C=100pF, R=1.5K
Ω)
±8
kV
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case Max
1.36
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C
Table 3.
Avalanche data
Symbol
Parameter
Value
Unit
EAS
Single pulse avalanche energy (starting Tj=25°C,
ID=IAR, VDD=25V)
470
mJ



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