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M58LR128HT85ZB5F датащи(PDF) 53 Page - STMicroelectronics

номер детали M58LR128HT85ZB5F
подробное описание детали  128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
PDF  112 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LR128HT85ZB5F датащи(HTML) 53 Page - STMicroelectronics

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M58LR128HT, M58LR128HB
Program and erase times and endurance cycles
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10
Program and erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in Table 17. Exact erase times may change depending on the memory array
condition. The best case is when all the bits in the block are at ‘0’ (pre-programmed). The
worst case is when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the
system overhead is negligible with respect to the erase time. In the M58LR128HT/B the
maximum number of Program/Erase cycles depends on the VPP voltage supply used.
Table 17.
Program/Erase times and endurance cycles(1) (2)
Parameter
Condition
Min
Typ
Typical after
100kW/E
Cycles
Max
Unit
Erase
Parameter Block (16 KWord)
0.4
1
2.5
s
Main Block (64
KWord)
Preprogrammed
1.2
3
4
s
Not Preprogrammed
1.5
4
s
Program(3)
Single Word
Word Program
12
180
µs
Buffer Program
12
180
µs
Buffer (32 Words) (Buffer Program)
384
µs
Main Block (64 KWord)
768
ms
Suspend Latency
Program
5
10
µs
Erase
5
20
µs
Program/Erase Cycles
(per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles



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