STW34NB20 datasheet(3/10 Pages) STMICROELECTRONICS

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STW34NB20

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)

Table 6. Off

Table 7. On (1)

Note: 1. Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %

Table 8. Dynamic

Note: 1. Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %

Table 9. Switching On

Table 10. Switching Off

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA VGS = 0

200

IDSS

Zero Gate Voltage

VDS = Max Rating

µA

Drain Current (VGS = 0)

VDS = Max Rating Tc = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 30 V

± 100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS; ID = 250 µA3

RDS(on)

Static Drain-source On

Resistance

VGS = 10V; ID = 17 A

0.062

0.075

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Forward

Transconductance

VDS > ID(on) x RDS(on)max; ID = 17 A

Ciss

Input Capacitance

VDS = 25 V; f = 1 MHz; VGS = 0

2400

3300

Coss

Output Capacitance

650

900

Crss

Reverse Transfer

Capacitance

130

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Time

VDD = 100 V; ID = 17 A; RG = 4.7 Ω

Rise Time

VGS = 10 V (see test circuit, Figure 16)

Total Gate Charge

VDD = 160 V; ID = 34 A; VGS = 10 V

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 160 V; ID = 34 A; RG = 4.7 Ω

Fall Time

VGS = 10 V (see test circuit, Figure 18)

Cross-over Time

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