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STW34NB20 датащи(PDF) 2 Page - STMicroelectronics

номер детали STW34NB20
подробное описание детали  N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET
PDF  10 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW34NB20 датащи(HTML) 2 Page - STMicroelectronics

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Table 3. Absolute Maximum Ratings
Note: 1. Pulse width limited by safe operating area
Table 4. Thermal Data
Table 5. Avalanche Characteristics
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
200
V
VDGR
Drain- gate Voltage (RGS = 20 kΩ)
200
V
VGS
Gate-source Voltage
± 30
V
ID
Drain Current (cont.) at TC = 25 °C
34
A
ID
Drain Current (cont.) at TC = 100 °C
21
A
IDM
(1)
Drain Current (pulsed)
136
A
Ptot
Total Dissipation at TC = 25 °C
180
W
Derating Factor
1.44
W°/C
Tstg
Storage Temperature
-65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max
0.69
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
30
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
34
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C; ID = IAR; VDD = 50 V)
650
mJ



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