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SST25VF080B датащи(PDF) 22 Page - Silicon Storage Technology, Inc |
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SST25VF080B датащи(HTML) 22 Page - Silicon Storage Technology, Inc |
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22 / 28 page ![]() 22 Data Sheet 8 Mbit SPI Serial Flash SST25VF080B ©2006 Silicon Storage Technology, Inc. S71296-01-000 1/06 TABLE 10: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum COUT1 Output Pin Capacitance VOUT = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T10.0 1296 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 11: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T11.0 1296 TABLE 12: AC OPERATING CHARACTERISTICS 25 MHz 50 MHz Symbol Parameter Min Max Min Max Units FCLK1 1. Maximum clock frequency for Read Instruction, 03H, is 25 MHz Serial Clock Frequency 25 50 MHz TSCKH Serial Clock High Time 18 9 ns TSCKL Serial Clock Low Time 18 9 ns TSCKR2 2. Maximum Rise and Fall time may be limited by TSCKH and TSCKL requirements Serial Clock Rise Time (Slew Rate) 0.1 0.1 V/ns TSCKF Serial Clock Fall Time (Slew Rate) 0.1 0.1 V/ns TCES3 3. Relative to SCK. CE# Active Setup Time 10 5 ns TCEH3 CE# Active Hold Time 10 5 ns TCHS3 CE# Not Active Setup Time 10 5 ns TCHH3 CE# Not Active Hold Time 10 5 ns TCPH CE# High Time 100 50 ns TCHZ CE# High to High-Z Output 15 8 ns TCLZ SCK Low to Low-Z Output 0 0 ns TDS Data In Setup Time 5 2 ns TDH Data In Hold Time 5 5 ns THLS HOLD# Low Setup Time 10 5 ns THHS HOLD# High Setup Time 10 5 ns THLH HOLD# Low Hold Time 10 5 ns THHH HOLD# High Hold Time 10 5 ns THZ HOLD# Low to High-Z Output 20 8 ns TLZ HOLD# High to Low-Z Output 15 8 ns TOH Output Hold from SCK Change 0 0 ns TV Output Valid from SCK 15 8 ns TSE Sector-Erase 25 25 ms TBE Block-Erase 25 25 ms TSCE Chip-Erase 50 50 ms TBP Byte-Program 10 10 µs T12.0 1296 |
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