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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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34653 датащи(PDF) 21 Page - Freescale Semiconductor, Inc |
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34653 датащи(HTML) 21 Page - Freescale Semiconductor, Inc |
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21 / 24 page  Analog Integrated Circuit Device Data Freescale Semiconductor 21 34653 TYPICAL APPLICATIONS POWER MOSFET ENERGY CAPABILITY Figure 23 shows a projected energy capability of the device’s internal Power MOSFET under a drain-to-source voltage of 82 V and an ambient temperature of 90°C. It is compared to the energy levels required for the capacitive loads of 100 µF, 200 µF, and 400 µF at 80 V for the discharge periods of 16 ms, 32 ms, and 64 ms, respectively. It is clear that the Power MOSFET well exceeds the required energy capability for all three cases with a sufficient margin. For example, the 400 µF capacitor load with a 64 ms discharge time requires an energy capability of about 1540 mJ, which is well below the Power MOSFET capability of about 3500 mJ. As a result to this analysis the 33652 is expected to exceedingly meet all the energy capability requirements for the possible capacitive loads. Figure 23. Projected Energy Capability of the Power MOSFET Compared to the Required Energy Levels of Some Capacitive Loads 400 µF 200 µF 100 µF Estimated for Area =1.7 mm2 0 500 1000 1500 2000 2500 3000 3500 Time (ms) 020 40 60 |
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