MP1909

– 30V, HIGH-FREQUENCY HALF-BRIDGE GATE DRIVER

MP1909 Rev. 1.0

www.MonolithicPower.com

4

7/10/2020

MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.

© 2020 MPS. All Rights Reserved.

ELECTRICAL CHARACTERISTICS

VCC = VBST - VSW = 12V, VEN = 3.3V, VPWM = 3.3V, no load at DRVH and DRVL, TJ = -40°C to +125°C

(7), typical value is tested at TJ = 25°C, unless otherwise noted.

Parameter

Symbol

Condition

Min

Typ

Max

Units

Supply Current

VCC shutdown current

ISHDN

VEN = 0, SW = GND, TJ = 25°C

100

165

µA

VEN = 0, SW = GND,

TJ = -40°C to +125°C

180

µA

VEN = 0, SW float, TJ = 25°C

50

100

µA

VEN = 0, SW float,

TJ = -40°C to +125°C

120

µA

VCC quiescent current

IDDQ1

PWM = 0, SW = GND, VEN = 3.3V

150

230

µA

PWM = 0, SW float, VEN = 3.3V

100

170

µA

VCC operating current

IDDQ2

fSW = 250kHz, CLOAD = 1nF

7.5

9.5

mA

Floating driver quiescent

current

IBSTQ

PWM = high

110

170

µA

Leakage current

ILK

BST = 35V, SW = 35V

1

µA

Inputs

PWM high

VPWM_H

2.2

V

PWM low

VPWM_L

0.8

V

PWM hysteresis

VPWM_HYS

0.5

V

PWM leakage current

IPWM

No internal pull-up or pull-down,

VPWM = 3.3V

-1

+1

µA

Under-Voltage Protection

VCC rising threshold

VCCR

3.6

4.1

4.6

V

VCC falling threshold

VCCF

3.6

3.8

4.2

V

(BST-SW) rising threshold

VBSTR

2.4

2.9

3.4

V

(BST-SW) falling threshold

VBSTF

2.8

V

EN input logic low

VEN_L

0.7

V

EN input logic high

VEN_H

1.5

V

EN hysteresis

VEN_HYS

300

mV

EN internal pull-down

resistance

REN

1

MΩ

EN turn-on delay

tEN_ON

BST - SW = 12V

3.6

µs

EN shutdown delay

tEN_OFF

20

ns

Bootstrap Diode

Bootstrap diode VF at 100µA

VF1

0.2

V

Bootstrap diode VF at

100mA

VF2

1.6

V

Bootstrap diode dynamic R

RD

At 100mA

13

Ω

Low-Side Gate Driver

Output resistance, sourcing

current

ROHL

VPWM = 0V, VCC = 5V

4

Ω

VPWM = 0V, VCC = 12V

1.5

Ω

IOHL (8)

VPWM = 0V, VCC = 12V

2

A