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MP1909 датащи(PDF) 3 Page - Monolithic Power Systems |
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MP1909 датащи(HTML) 3 Page - Monolithic Power Systems |
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3 / 15 page ![]() MP1909 – 30V, HIGH-FREQUENCY HALF-BRIDGE GATE DRIVER MP1909 Rev. 1.0 www.MonolithicPower.com 3 7/10/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. PIN FUNCTIONS Pin # Name Description 1 BST Bootstrap. This is the positive power supply for the internal floating high-side MOSFET driver. Connect a bypass capacitor between the BST and SW pins. 2 PWM Control signal input for the high-side and low-side drivers. Setting PWM to logic high turns on the high-side MOSFET; setting PWM to logic low turns on the low-side MOSFET. 3 EN On/off control. Set EN high to turn on the IC; set EN low to turn it off. 4 VCC Supply input. This pin supplies power to all the internal circuitry. Place a decoupling capacitor to ground, and close to this pin to ensure stable and clean supply. 5 DRVL Low-side driver output. 6 GND Chip ground. 7 SW Switching node. 8 DRVH Floating driver output. ABSOLUTE MAXIMUM RATINGS (1) Supply voltage (VCC) .....................-0.3V to +15V SW voltage (VSW)……………..-0.3V (-5V <10ns) .................................... to +35V (45V <10ns) BST voltage (VBST) ........................-0.3V to +50V BST to SW ....................................-0.3V to +15V DRVH to SW ............. -0.3V to (BST-SW) + 0.3V DRVL to GND ................... -0.3V to (VCC + 0.3V) EN, PWM .....................................-0.3V to +5.5V Continuous power dissipation (TA = 25°C) (2) (5) ………………………………………………... 2.2W Junction temperature ................................150°C Lead temperature .....................................260°C Storage temperature ................ -65°C to +150°C ESD Ratings Human body model (HBM) ...................... 1000V Charged device model (CDM)..................1000V Recommended Operating Conditions (3) Supply voltage (VCC) .................... 4.5V to 12V (4) Power input voltage (VIN) .................0.8V to 30V Operating junction temp (TJ) .... -40°C to +125°C Thermal Resistance θJA θJC SOT583 EV1909-TL-00A (5) .......... 55 ...... 21... °C/W JESD51-7 (6) ......... 130 ..... 60... °C/W Notes: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temperature, TJ (MAX), the junction-to- ambient thermal resistance, θ JA, and the ambient temperature, TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD (MAX) = (TJ (MAX) - TA) / θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) 4.5V/12V is only a typical value for the supply voltage. 5) Measured on EV1909-TL-00A, 2-layer PCB. 6) The value of θ JA given in this table is only valid for comparison with other packages and cannot be used for design purposes. These values were calculated in accordance with JESD51-7, and simulated on a specified JEDEC board. They do not represent the performance obtained in an actual application. |
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