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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC3117 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3117 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC3117 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage- : VCE(sat)= 0.45V(Max) @IC=0.5A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 2.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SC3117 |
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Аналогичное описание - 2SC3117 |
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