BST82

N-channel enhancement mode field-effect transistor

Rev. 03 — 26 July 2000

Product specification

c

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1.

Description

N-channel enhancement mode field-effect transistor in a plastic package using

TrenchMOS™1 technology.

Product availability:

BST82 in SOT23.

2.

Features

s TrenchMOS™ technology

s Very fast switching

s Logic level compatible

s Subminiature surface mount package.

3.

Applications

s Relay driver

s High speed line driver

s Logic level translator.

4.

Pinning information

1.

TrenchMOS is a trademark of Royal Philips Electronics.

Table 1:

Pinning - SOT23, simplified outline and symbol

Pin

Description

Simplified outline

Symbol

1

gate (g)

SOT23

N-channel MOSFET

2

source (s)

3

drain (d)

12

3

03ab44

d

g

s

03ab30