Philips Semiconductors

BST82

N-channel enhancement mode field-effect transistor

Product specification

Rev. 03 — 26 July 2000

2 of 13

9397 750 07223

© Philips Electronics N.V. 2000. All rights reserved.

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

VDS

drain-source voltage (DC)

Tj =25to150 °C

−

100

V

ID

drain current (DC)

Tsp =25 °C; VGS =5V

−

190

mA

Ptot

total power dissipation

Tsp =25 °C

−

0.83

W

Tj

junction temperature

−

150

°C

RDSon

drain-source on-state resistance

VGS =5V; ID = 150 mA

5

10

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

Tj =25to150 °C

−

100

V

VDGR

drain-gate voltage (DC)

Tj =25to150 °C; RGS =20kΩ−

100

V

VGS

gate-source voltage (DC)

−±20

V

ID

drain current (DC)

Tsp =25 °C; VGS =5V; Figure 2 and 3

−

190

mA

Tsp = 100 °C; VGS =5V; Figure 2

−

120

mA

IDM

peak drain current

Tsp =25 °C; pulsed; tp ≤ 10 µs;

Figure 3

−

0.8

A

Ptot

total power dissipation

Tsp =25 °C; Figure 1

−

0.83

W

Tstg

storage temperature

−65

+150

°C

Tj

operating junction temperature

−65

+150

°C

Source-drain diode

IS

source (diode forward) current (DC)

Tsp =25 °C

−

190

mA

ISM

peak source (diode forward) current

Tsp =25 °C; pulsed; tp ≤ 10 µs

−

0.8

A