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MIC4606 датащи(PDF) 30 Page - Microchip Technology

номер детали MIC4606
подробное описание детали  85V Full-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot-Through Protection
PDF  40 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MIC4606 датащи(HTML) 30 Page - Microchip Technology

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MIC4606
DS20005604D-page 30
 2017-2019 Microchip Technology Inc.
7.13
Grounding, Component
Placement and Circuit Layout
Nanosecond switching speeds and ampere peak cur-
rents in and around the MIC4606 driver require proper
placement and trace routing of all components. Improper
placement may cause degraded noise immunity, false
switching, excessive ringing or circuit latch-up.
Figure 7-12 shows the critical current paths of the high
and low-side driver when their outputs go high and turn
on the external MOSFETs. It also helps demonstrate
the need for a low-impedance ground plane. Charge
needed to turn on the MOSFET gates comes from the
decoupling capacitors, CVDD and CB. Current in the
low-side gate driver flows from CVDD through the inter-
nal driver, into the MOSFET gate, and out the source.
The return connection back to the decoupling capacitor
is made through the ground plane. Any inductance or
resistance in the ground return path causes a voltage
spike or ringing to appear on the source of the MOSFET.
This voltage works against the gate drive voltage and
can either slow down or turn off the MOSFET during the
period when it should be turned on.
Current in the high-side driver is sourced from capaci-
tor CB, and flows into the xHB pin and out the xHO pin,
into the gate of the high-side MOSFET. The return path
for the current is from the source of the MOSFET and
back to capacitor CB. The high-side circuit return path
usually does not have a low-impedance ground plane,
so the etch connections in this critical path should be
short and wide to minimize parasitic inductance. As
with the low-side circuit, impedance between the
MOSFET source and the decoupling capacitor causes
negative voltage feedback that fights the turn-on of the
MOSFET.
It is important to note that capacitor CB must be placed
close to the xHB and xHS pins. This capacitor not only
provides all the energy for turn-on, but it must also keep
xHB pin noise and ripple low for proper operation of the
high-side drive circuitry.
FIGURE 7-12:
Turn-On Current Paths.
Figure 7-13 shows the critical current paths when the
driver outputs go low and turn off the external
MOSFETs. Short, low-impedance connections are
important during turn-off for the same reasons given in
the turn-on explanation. Current flowing through the
internal diode replenishes charge in the bootstrap
capacitor, CB.
FIGURE 7-13:
Turn-Off Current Paths.
xHS
xHB
xHO
V
DD
CB
xLO
xHI
xLI
V
SS
CV
DD
GND
PLANE
GND
PLANE
LOW-SIDE DRIVE TURN-ON
CURRENT PATH
HIGH-SIDE DRIVE
TURN-ON CURRENT
PATH
LEVEL
SHIFT
xHS
xHB
xHO
V
DD
CB
xLO
xHI
xLI
V
SS
CVDD
LOW-SIDE DRIVE
TURN-OFF
CURRENT PATH
HIGH-SIDE DRIVE
TURN-OFF CURRENT
PATH
LEVEL
SHIFT



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