Data Sheet G15640EJ3V0DS

4

µµµµPC4250

ELECTRICAL CHARACTERISTICS (TA = 25°C, V

±±±± = ±±±±15 V)

ISET = 1

µAISET = 10 µA

Parameter

Symbol

Conditions

MIN.

MAX.

MIN.

MAX.

Unit

RS

≤ 100 kΩ±5

±6

Input Offset Voltage

VIO

V± =

±1.5 V, RS ≤ 100 kΩ±5

±6

mV

Input Offset Current

Note 7

IIO

±6

±20

nA

10

75

Input Bias Current

Note 7

IB

V± =

±1.5 V

10

75

nA

VO =

±10 V, RL = 100 kΩ

60000

Large Signal Voltage Gain

Av

VO =

±10 V, RL = 10 kΩ

60000

IO = 0 A

11

100

Supply Current

ICC

V± =

±1.5 V, IO = 0 A

8

90

µA

IO = 0 A

330

3000

Power Dissipation

Pd

V± =

±1.5 V, IO = 0 A

24

270

µW

Common Mode Rejection Ratio

CMR

RS

≤ 10 kΩ

70

70

dB

Supply Voltage Rejection Ratio

SVR

RS

≤ 10 kΩ

74

74

dB

RL = 100 k

Ω±12

Output Voltage Swing

Vom

V± =

±1.5 V, RL = 100 kΩ±0.6

V

RL = 10 k

Ω±12

Output Voltage Swing

Vom

V± =

±1.5 V, RL = 10 kΩ±0.6

V

±13.5

±13.5

Common Mode Input Voltage Range

VICM

V± =

±1.5 V

±0.6

±0.6

V

Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.

TYPICAL APPLICATION

3.3 M

VO

330 k

RSET

12 M

VIN

300 k

x10 Amplifier (500 nW)

−

+

1.0 V

−

1.0 V

+