Data Sheet G15205EJ6V0DS

3

μPC4072

ELECTRICAL CHARACTERISTICS (TA = 25

°C, V± = ±15 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Input Offset Voltage

VIO

RS

≤ 50 Ω

±3

±10

mV

Input Offset Current

Note7

IIO

±5

±50

pA

Input Bias Current

Note7

IB

30

200

pA

Large Signal Voltage Gain

AV

RL

≥ 2 kΩ , VO = ±10 V

25000

200000

Supply Current

Note8

ICC

IO = 0 A

4

5

mA

Common Mode Rejection Ratio

CMR

70

86

dB

Supply Voltage Rejection Ratio

SVR

70

86

dB

RL

≥ 10 kΩ

±12

±13.5

V

Output Voltage Swing

Vom

RL

≥ 2 kΩ

±10

±12

V

Common Model Input Voltage Range

VICM

±10

V

Slew Rate

SR

AV =

+1

13

V/

μs

Unity Gain Frequency

funity

3

MHz

Input Equivalent Noise Voltage

Vn

RS = 100

Ω, f = 10 Hz to 10 kHz

4

μVr.m.s.

Input Equivalent Noise Voltage Density

en

RS = 100

Ω, f = 1 kHz

17

nV/

√Hz

Channel Separation

120

dB

Input Offset Voltage

VIO

RS

≤ 50 Ω, TA = −20 to +70°C

±13

mV

Average VIO Temperature Drift

ΔVIO/ΔT

TA =

−20 to +70°C

±10

μV/°C

Input Offset Current

Note7

IIO

TA =

−20 to +70°C

±2

nA

Input Bias Current

Note7

IB

TA =

−20 to +70°C

7

nA

Notes 7. Input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input

stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain the

junction temperature close to the operating ambient temperature.

8. This current flows irrespective of the existence of use.