Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2508DF

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-hs

Junction to heatsink

without heatsink compound

-

3.7

K/W

R

th j-hs

Junction to heatsink

with heatsink compound

-

2.8

K/W

R

th j-a

Junction to ambient

in free air

35

-

K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

I

EBO

Emitter cut-off current

V

-

227

-

mA

BV

EBO

Emitter-base breakdown voltage

I

7.5

13.5

-

V

R

be

Base-emitter resistance

V

-

33

-

Ω

V

CEOsust

Collector-emitter sustaining voltage

I

700

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

-

1.0

V

V

BEsat

Base-emitter saturation voltage

I

-

-

1.1

V

h

FE

DC current gain

I

-

13

-

h

FE

I

4

5.5

7.0

V

F

Diode forward voltage

I

-

1.6

2.0

V

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

C

c

Collector capacitance

I

80

-

pF

Switching times (16 kHz line

I

deflection circuit)

-V

t

s

Turn-off storage time

5.0

6.0

µs

t

f

Turn-off fall time

0.4

0.6

µs

Switching times (38 kHz line

I

deflectioin circuit)

-V

t

s

Turn-off storage time

4.7

5.7

µs

t

f

Turn-off fall time

0.25

0.35

µs

2 Measured with half sine-wave voltage (curve tracer).

July 1998

2

Rev 1.600