Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2508DF

Fig.7. Typical base-emitter saturation voltage.

V

Fig.8. Typical collector-emitter saturation voltage.

V

Fig.9. Typical turn-off losses. T

Eoff = f (I

Fig.10. Transient thermal impedance.

Z

Fig.11. Typical collector storage and fall time.

ts = f (I

Fig.12. Normalised power dissipation.

PD% = 100

⋅P

0

1

2

3

4

IB / A

VBESAT / V

BU2508DF

1.2

1.1

1

0.9

0.8

0.7

0.6

Tj = 25 C

Tj = 125 C

IC=

6A

4.5A

3A

2A

0.001

0.01

0.1

1

10

0

0.2

0.1

0.05

0.02

0.5

BU2508AX

tp / sec

Zth K/W

1.0E-06

1E-04

1E-02

1E+00

D =

tp

tp

T

T

P

t

D

0.1

1

10

IB / A

VCESAT / V

BU2508DF

10

1

0.1

Tj = 25 C

Tj = 125 C

Tj = 25 C

Tj = 125 C

IC=2A

3A

4.5A

6A

0.1

1

10

IB / A

ts, tf / us

BU2508DF

12

11

10

9

8

7

6

5

4

3

2

1

0

IC =

4.5A

3.5A

ts

tf

0.1

1

10

IB / A

Eoff / uJ

BU2508DF

1000

100

10

IC = 4.5A

3.5A

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

July 1998

4

Rev 1.600