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RT9603CS датащи(PDF) 8 Page - Richtek Technology Corporation

номер детали RT9603CS
подробное описание детали  Synchronous-Rectified Buck MOSFET Drivers
PDF  10 Pages
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производитель  RICHTEK [Richtek Technology Corporation]
домашняя страница  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT9603CS датащи(HTML) 8 Page - Richtek Technology Corporation

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RT9603
Preliminary
8
DS9603-00
November 2003
www.richtek.com
0
100
200
300
400
500
600
700
800
900
1000
0
200
400
600
800
1000
Frequency (kHz)
CU=CL=3nF
CU=CL=1nF
CU=CL=2nF
Power Dissipation vs. Frequency
Figure 3. Part of Bootstrap Circuit of RT9603
In practice, a low value capacitor CB will lead the over-
charging that could damage the IC. Therefore to minimize
the risk of overcharging and reducing the ripple on VCB,
the bootstrap capacitor should not be smaller than 0.1
µF,
and the larger the better. In general design, using 1
µF
can provide better performance. At least one low-ESR
capacitor should be used to provide good local de-
coupling. Here, to adopt either a ceramic or tantalum
capacitor is suitable.
Power Dissipation
For not exceeding the maximum allowable power
dissipation to driv e the IC beyond the maximum
recommended operating junction temperature of 125
°C,
it is necessary to calculate power dissipation appro-
priately. This dissipation is a function of switching
frequency and total gate charge of the selected MOSFET.
Figure 4 shows the power dissipation test circuit. CL and
CU are the DRVH and DRVL load capacitors, respectively.
The bootstrap capacitor value is 0.01
µF.
Figure 4. Test Circuit
Figure 5 shows the power dissipation of the RT9603 as
a function of frequency and load capacitance. The value
of the CU and CLare the same and the frequency is varied
from 100kHz to 1MHz.
Figure 5. Power Dissipation vs. Frequency
The operating junction temperature can be calculated
from the power dissipation curves (Figure 5). Assume
VCC=12V, operating frequency is 200kHz and the
CU=CL=1nF which emulate the input capacitances of the
high side and low side power MOSFETs. From Figure 5,
the power dissipation is 100mW. For RT9603, the
package thermal resistance
θJA is 67° C/W, the operating
junction temperature is calculated as:
TJ = (67°C/W x 100mW) + 25°C = 31.7°C
(11)
where the ambient temperature is 25
°C.
The method to improve the thermal transfer is to increase
the PC board copper area around the RT9603 firstly.
Then, adding a ground pad under IC to transfer the heat
to the peripheral of the board.
VIN
CB
VCB
+
-
BST
VCC
VCC
DRVH
SW
DRVL
PGND
1N4148
VCC
IN
PGND
BST
DRVH
SW
DRVL
RT9603
1uF
C
L
3nF
20
C
U
3nF
2N7002
2N7002
+12V
+12V
1uF
PWM
1N4148
CBST
10



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