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RT9603CS датащи(PDF) 7 Page - Richtek Technology Corporation

номер детали RT9603CS
подробное описание детали  Synchronous-Rectified Buck MOSFET Drivers
PDF  10 Pages
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производитель  RICHTEK [Richtek Technology Corporation]
домашняя страница  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

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RT9603
Preliminary
7
DS9603-00
November 2003
www.richtek.com
Before driving the gate of the high side MOSFET up to
12V (or 5V), the low side MOSFET has to be off; and the
high side MOSFET is turned off before the low side is
turned on. From Figure 1, the body diode "D
2
" had been
turned on before high side MOSFETs turned on.
Before the low side MOSFET is turned on, the Cgd2 have
been charged to VIN. Thus, as Cgd2 reverses its polarity
and g2 is charged up to 12V, the required current is
gd 2
gd 2
gd2
r2
+
==
dV
V i
12V
l
C
C
(4)
d tt
==
g d1
g1
gd1
r1
d V
1 2V
l
C
C
(3)
d t
t
(5)
(A)
1.428
10
14
12
10
1660
l
9
12
gs1
=
×
×
×
=
(6)
(A)
0.88
10
30
12
10
2200
l
9
12
gs2
=
×
×
×
=
It is helpful to calculate these currents in a typical case.
Assume a synchronous rectified buck converter, input
voltage VIN = 12V, Vg1 = Vg2 = 12V. The high side MOSFET
is PHB83N03LT whose Ciss = 1660pF, Crss = 380pF, and
tr = 14ns. The low side MOSFET is PHB95N03LT whose
Ciss = 2200pF, Crss = 500pF and tr = 30ns, from the
equation (1) and (2) we can obtain
Figure 2. Two-Phase Synch. Buck Converter Circuit
from equation. (3) and (4)
the total current required from the gate driving source is
By a similar calculation, we can also get the sink current
required from the turned off MOSFET.
(7)
(A)
0.326
10
14
12
10
380
l
9
12
gs1
=
×
×
×
=
(9)
1.745(A)
0.326)
(1.428
I
I
I
gd1
gs1
g1
=
+
=
+
=
(10)
1.28(A)
0.4)
(0.88
I
I
I
gd2
gs2
g2
=
+
=
+
=
Layout Consideration
Figure 2 shows the schematic circuit of a two-phase
synchronous buck converter to implement the RT9603.
The converter operates from 5V to 12V of VIN.
When layout the PC board, it should be very careful. The
power-circuit section is the most critical one. If not
configured properly, it will generate a large amount of EMI.
The junction of Q1, Q2, L2 should be very close.
Next, the trace from DRVH, and DRVL should also be
short to decrease the noise of the driver output signals.
SW signals from the junction of the power MOSFET,
carrying the large gate drive current pulses, should be
as heavy as the gate drive trace. The bypass capacitor
C4 should be connected to PGND directly. Furthermore,
the bootstrap capacitors (CB) should always be placed
as close to the pins of the IC as possible.
Select the Bootstrap Capacitor
Figure 3 shows part of the bootstrap circuit of RT9603.
The VCB (the voltage difference between BST and SW on
RT9603) provides a voltage to the gate of the high side
power MOSFET. This supply needs to be ensured that
the MOSFET can be driven. For this, the capacitance CB
has to be selected properly. It is determined by following
constraints.
(8)
0.4(A)
10
30
12)
(12
10
500
I
9
-12
gd2
=
×
+
×
×
=
BST
DRVH
SW
DRVL
VCC
IN
14
2
5
7
8
PGND
10
1uF
12V
1uF
PHB83N03LT
PHB95N03LT
2uH
1uF
1000uF
1.2uH
12V
1500uF
6
L1
C1
L2
C3
Q2
Q1
C2
CB
D1
R1
C4
PWM
VIN
VCORE



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