Nexperia

PSMN3R3-40MLH

N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

S

source

2

S

source

3

S

source

4

G

gate

mb

D

Mounting base; connected

to drain

1

4

3

2

LFPAK33 (SOT1210)

S

D

G

mbb076

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

PSMN3R3-40MLH

LFPAK33

Plastic, single ended surface mounted package (LFPAK33); 8

leads; 0.65 mm pitch

SOT1210

7. Marking

Table 4. Marking codes

Type number

Marking code

PSMN3R3-40MLH

3H3L40

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

40

V

VDSM

peak drain-source

voltage

tp ≤ 20 ns; f ≤ 500 kHz; EDS(AL) ≤ 200 nJ;

pulsed

-

45

V

VDGR

drain-gate voltage

25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ

-

40

V

VGS

gate-source voltage

-20

20

V

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

101

W

VGS = 10 V; Tmb = 25 °C; Fig. 2

[1]

-

118

A

ID

drain current

VGS = 10 V; Tmb = 100 °C

-

84

A

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3

-

475

A

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Tsld(M)

peak soldering

temperature

-

260

°C

Source-drain diode

IS

source current

Tmb = 25 °C

-

101

A

PSMN3R3-40MLH

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© Nexperia B.V. 2019. All rights reserved

Product data sheet

11 November 2019

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