Nexperia

PSMN3R3-40MLH

N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

aaa-030384

-60

-30

0

30

60

90

120 150 180

0

0.4

0.8

1.2

1.6

2

2.4

Tj (°C)

aa

Fig. 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

aaa-030480

0

10

20

30

40

50

0

2

4

6

8

10

QG (nC)

VGS

VGS

(V)

(V)

20 V

20 V

VDS = 8 V

VDS = 8 V

32 V

32 V

Tj = 25 °C; ID = 25 A

Fig. 12. Gate-source voltage as a function of gate

charge; typical values

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 13. Gate charge waveform definitions

aaa-030542

10-1

1

10

102

10

102

103

104

VDS (V)

C

C

(pF)

(pF)

Ciss

Ciss

Coss

Coss

Crss

Crss

VGS = 0 V; f = 1 MHz

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PSMN3R3-40MLH

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Product data sheet

11 November 2019

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