IXTP50N20P datasheet(1/5 Pages) IXYS

номер детали	IXTP50N20P

подробное описание детали	PolarHT Power MOSFET N-Channel Enhancement Mode

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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G

D

S

(TAB)

G

S

(TAB)

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 175°C

200

V

DGR

T

J = 25°C to 175°C; RGS = 1 MΩ

200

V

GSM

±20

V

I

D25

T

C = 25°C50

A

I

DM

T

C = 25°C, pulse width limited by TJM

120

A

I

AR

T

C = 25°C50

A

E

AR

T

C = 25°C30

mJ

E

AS

T

C = 25°C

1.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

10

V/ns

T

J ≤ 150°C, RG = 10 Ω

P

D

T

C = 25°C

360

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +125

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Maximum tab temperature for soldering

260

°C

TO-263 package for 10s

M

d

Mounting torque

(TO-3P / TO-220)

1.13/10 Nm/lb.in.

Weight

TO-3P

5.5

g

TO-220

4

g

TO-263

3

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99156A(04/04)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS = 0 V, ID = 250 µA

200

V

GS(th)

V

DS = VGS, ID = 250µA

2.5

5.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 150°C

250

µA

R

DS(on)

V

GS = 10 V, ID = IT

50

60

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

PolarHTTM

Power MOSFET

N-Channel Enhancement Mode

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

PolarHTTM DMOS transistors

utilize proprietary designs and

process. US patent is pending.

TO-263 (I

XTA)

TO-220 (I

XTP)

D

(TAB)

G

S

IXTQ 50N20P

IXTA 50N20P

IXTP 50N20P

V

DSS

= 200

V

I

D25

=

50

A

R

DS(on) =

60 m

Ω

TO-3P (I

XTQ)

Preliminary Data Sheet

Аналогичный номер детали - IXTP50N20P

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IXTP50N20P	294Kb / 2P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXTP50N20PM	129Kb / 4P	N-Channel Enhancement Mode
Inchange Semiconductor ...	IXTP50N20PM	295Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - IXTP50N20P

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IXYS Corporation	IXTQ100N25P	613Kb / 5P	PolarHT Power MOSFET N-Channel Enhancement Mode
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IXYS Corporation	VMO1200-01F	548Kb / 6P	PolarHT??Module N-Channel Enhancement Mode

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