IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 50N20P IXTP 50N20P

IXTQ 50N20P

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Fig . 7. In put A d m ittance

0

10

20

30

40

50

60

70

80

90

567

8

9

10

25ºC

-40ºC

Fig. 8. Tr an s conductance

0

4

8

12

16

20

24

28

32

36

0

20406080

100

120

25ºC

150ºC

Fig. 9. Sour ce Cur r e nt vs .

So u r ce -To-Dr ain V o ltag e

0

25

50

75

100

125

150

0.4

0.6

0. 8

1

1. 2

1. 4

Fig . 10. Gate C h ar g e

0

1

2

3

4

5

6

7

8

9

10

0

102030

40506070

Fig . 11. Cap acitan ce

100

1000

10000

0

5

10

15

20

25

30

35

40

C is s

C os s

C rss

f = 1MH z

Fig . 12. Fo r w ar d -Bias

Safe Op er atin g A r ea

1

10

100

1000

10

100

1000

100µs

1m s

DC

10m s

25µs