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PEMZ1 датащи(PDF) 2 Page - Nexperia B.V. All rights reserved |
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PEMZ1 датащи(HTML) 2 Page - Nexperia B.V. All rights reserved |
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2 / 7 page ![]() Nexperia PEMZ1 NPN/PNP general purpose transistor 6. Ordering information Table 3. Ordering information Package Type number Name Description Version PEMZ1 SOT666 plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body SOT666 7. Marking Table 4. Marking codes Type number Marking code PEMZ1 FZ 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 5 V IC collector current - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 200 mW Per device Ptot total power dissipation Tamb ≤ 25 °C [1] - 300 mW Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] - - 416 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. PEMZ1 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 29 December 2022 2 / 7 |
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